日本Elionix 超高精密電子束光刻系統(tǒng) ELS-F150

ELS-F150 Ultra High Precision Electron Beam Lithography System

World's highest acceleration voltage electron beam

lithography system

世界上加速電壓的電子束光刻系統(tǒng)

The ELS-F150 is the world's first 150 kV electron beam lithography system. Expanding upon the ELSF125 base system, the ELS-F150 enables single digit nanoscale device fabrication for advanced research.

ELS-F150是一個150千伏電子束光刻系統(tǒng)。在ELS-F125基礎(chǔ)上展開系統(tǒng)，ELS-F150支持單位納米級用于高級研究的設(shè)備制造。

Main Applications:

主要應(yīng)用領(lǐng)域

- Quantum dots for quantum computing

-量子點用于量子計算

- Resolution and edge roughness testing for EUV resist

Evaluation

EUV抗蝕劑的分辨率和邊緣粗糙度測試評估

- < 10 nm master fabrication and material evaluation for

nanoimprint lithography

< 10nm母版制作和材料評估納米壓印光刻

- T-gate pattern on thick resist for HEMT devices

- HEMT器件厚抗蝕膠上的T-型柵極圖案

- Nano gap patterning for bionano sensors

- 用于生物傳感器的納米間隙模式

- Fresnel Zone Plate (FZP) for X-ray gratings

- x射線光柵的菲涅耳帶板(FZP)

Key Product Features

關(guān)鍵產(chǎn)品特性

- 4 nm linewidth guaranteed at 150 kV

- 4納米線寬保證在150千伏

- 1.5 nm beam diameter and minimum proximity effect at 150 kV

- -1.5納米束直徑和最小接近效應(yīng)在150千伏

- Wider process margin than 125 kV makes it easier to fabricate advanced nanodevices

- -比125千伏更寬的工藝裕度使制造*的納米器件更容易

- Single cassette auto-loader as default, supports up to 6 slot multi-cassette auto-loader (option)

-默認單盒自動加載，最多支持6槽多盒自動加載(可選)

High Throughput and Uniformity

高通量和均勻性

- Superior fine line writing:

-的細線條書寫:

3 nm line width at 50 nm pitch using commercially available resist

3nm線寬，50 nm間距，使用商用抗蝕劑

User-friendly Interface

友好的用戶界面

[CAD and SEM interfaces on Windows]

CAD和SEM界面在Windows上

- Easy pattern design function

- -簡單的圖案設(shè)計功能

- Easy control of beam condition

- -易于控制電子束的條件

Specification規(guī)格